Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method

Titanium dioxide (TiO2) films were deposited by plasma enhanced atomic layer deposition (PE-ALD) system using tetrakis-dimethylamido-titanium (TDMAT) at 250 °C. We applied a new source feeding method, known as Discrete Feeding Method (DFM), to PE-ALD TiO2 process for comparing the deposition rate, t...

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Bibliographic Details
Published in:AIP advances 2019-03, Vol.9 (3), p.035333-035333-6
Main Authors: Song, Heungseop, Shin, Donghyuk, Jeong, Ji-eun, Park, Heungsoo, Ko, Dae-Hong
Format: Article
Language:English
Subjects:
Atomic layer epitaxy
Physical properties
Thin films
Titanium
Titanium dioxide
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Summary:Titanium dioxide (TiO2) films were deposited by plasma enhanced atomic layer deposition (PE-ALD) system using tetrakis-dimethylamido-titanium (TDMAT) at 250 °C. We applied a new source feeding method, known as Discrete Feeding Method (DFM), to PE-ALD TiO2 process for comparing the deposition rate, the physical and electrical film properties with the films deposited by conventional ALD method. Various analytical studies were carried out to investigate the change of TiO2 thin film characteristics due to DFM application. As a result, the optimal process condition was obtained with high physical properties and productivity while keeping electrical characteristics equivalent to those of the conventional ALD condition.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.5085801