Resistivity scaling and electron surface scattering in epitaxial Co(0001) layers

In situ and ex situ transport measurements on epitaxial Co(0001)/Al2O3(0001) layers with thickness d = 7–300 nm are used to quantify the resistivity ρ scaling due to electron surface scattering. Sputter deposition at 300 °C followed by in situ annealing at 500 °C leads to single-crystal layers with...

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Bibliographic Details
Published in:Journal of applied physics 2019-06, Vol.125 (24)
Main Authors: Milosevic, Erik, Kerdsongpanya, Sit, McGahay, Mary E., Zangiabadi, Amirali, Barmak, Katayun, Gall, Daniel
Format: Article
Language:English
Subjects:
Aluminum oxide
Applied physics
Electrical resistivity
Electrons
Epitaxy
Scaling
Scattering
Single crystals
Thickness
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Summary:In situ and ex situ transport measurements on epitaxial Co(0001)/Al2O3(0001) layers with thickness d = 7–300 nm are used to quantify the resistivity ρ scaling due to electron surface scattering. Sputter deposition at 300 °C followed by in situ annealing at 500 °C leads to single-crystal layers with smooth surfaces (
ISSN:0021-8979
1089-7550
DOI:10.1063/1.5086458