Spectral diffusion time scales in InGaN/GaN quantum dots

A detailed temporal analysis of the spectral diffusion phenomenon in single photon emitting InGaN/GaN quantum dots (QDs) is performed via measurements of both time-varying emission spectra and single photon emission intensity autocorrelation times. Excitation dependent phenomena are investigated via...

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Bibliographic Details
Published in:Applied physics letters 2019-03, Vol.114 (11)
Main Authors: Gao, Kang, Springbett, Helen, Zhu, Tongtong, Oliver, Rachel A., Arakawa, Yasuhiko, Holmes, Mark J.
Format: Article
Language:English
Subjects:
Applied physics
Emission analysis
Emission spectra
Excitation
Gallium nitrides
Indium gallium nitrides
Photon emission
Photons
Quantum dots
Quantum theory
Spectral emittance
Time
Variation
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Summary:A detailed temporal analysis of the spectral diffusion phenomenon in single photon emitting InGaN/GaN quantum dots (QDs) is performed via measurements of both time-varying emission spectra and single photon emission intensity autocorrelation times. Excitation dependent phenomena are investigated via the optical excitation of carriers into the GaN barrier material and also directly into InGaN. Excitation into InGaN reveals that the fastest environmental fluctuations occur on timescales as long as a few hundreds of nanoseconds: an order of magnitude longer than previously measured in GaN QDs. Such long time scales may in future allow for the generation of indistinguishable photons in spite of the fact that the experimentally measured linewidths are broad.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5088205