Iontronic control of GaInAsP photonic crystal nanolaser

In this study, we fabricated a photoelectrochemical circuit using GaInAsP photonic crystal nanolasers as a working electrode. Then, we controlled the emission intensity and lasing wavelength of these nanolasers by applying a bias voltage in an ionic solution. The electrochemical working points for t...

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Bibliographic Details
Published in:Applied physics letters 2019-06, Vol.114 (22)
Main Authors: Saijo, Yoshito, Watanabe, Keisuke, Watanabe, Takumi, Terada, Yu, Nishijima, Yoshiaki, Baba, Toshihiko
Format: Article
Language:English
Subjects:
Applied physics
Electric double layer
Emissions control
Gallium indium arsenide phosphide
Liquid-solid interfaces
Photonic crystals
Semiconductor lasers
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Summary:In this study, we fabricated a photoelectrochemical circuit using GaInAsP photonic crystal nanolasers as a working electrode. Then, we controlled the emission intensity and lasing wavelength of these nanolasers by applying a bias voltage in an ionic solution. The electrochemical working points for the emission intensity and wavelength were observed for the backward and forward biases, respectively. We confirmed that the emission intensity is primarily changed by the surface recombination, which is enhanced by the Schottky barrier near the solid–liquid interface. The wavelength shift is also assumed to be caused by the Pockels effect in the electric double layer of the solution. This control method can maximize and stabilize the performance of photonic biochemical sensors and also become an option in controlling the laser diode characteristics.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5098119