Colloidal quantum dots for infrared detection beyond silicon

This perspective describes the advantages of infrared colloidal quantum dots (CQDs) for photodetection beyond silicon and provides a brief review of the development of CQD photodetection. The standard specifications for photodetectors are listed with particular emphasis on the detectivity. High gain...

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Bibliographic Details
Published in:The Journal of chemical physics 2019-08, Vol.151 (6)
Main Authors: Guyot-Sionnest, Philippe, Ackerman, Matthew M., Tang, Xin
Format: Article
Language:English
Subjects:
High gain
Quantum dots
Silicon
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Summary:This perspective describes the advantages of infrared colloidal quantum dots (CQDs) for photodetection beyond silicon and provides a brief review of the development of CQD photodetection. The standard specifications for photodetectors are listed with particular emphasis on the detectivity. High gain improves the responsivity but does not improve the detectivity, while nonradiative losses do not prevent high responsivity but limit the detectivity. Performances of CQD detectors and HgTe CQDs, in particular, are compared with the maximum possible detectivity based on detailed balance from the device temperature and nonradiative losses.
ISSN:0021-9606
1089-7690
DOI:10.1063/1.5115501