Low temperature growth of Ga2O3 films on sapphire substrates by plasma assisted pulsed laser deposition

Monoclinic β-Ga2O3 thin films with (-201) orientation have been fabricated at substrate temperature as low as 200 °C by using plasma assisted pulsed laser deposition. The film showed high transmittance of over 80% with clear fringes in the wavelength range from 300 to 1000 nm. Structural characteriz...

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Bibliographic Details
Published in:AIP advances 2019-08, Vol.9 (8), p.085022-085022-4
Main Authors: Hu, Congyu, Zhang, Fabi, Saito, Katsuhiko, Tanaka, Tooru, Guo, Qixin
Format: Article
Language:English
Subjects:
Gallium oxides
Low temperature
Pulsed laser deposition
Pulsed lasers
Raman spectra
Sapphire
Structural analysis
Substrates
Temperature
Thin films
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Summary:Monoclinic β-Ga2O3 thin films with (-201) orientation have been fabricated at substrate temperature as low as 200 °C by using plasma assisted pulsed laser deposition. The film showed high transmittance of over 80% with clear fringes in the wavelength range from 300 to 1000 nm. Structural characterization from X-ray diffraction as well as Raman spectra analysis demonstrated the monoclinic structure of the films. β-Ga2O3 film deposited at 200 °C showed similar growth rate as well as optical bandgap values with films grown at higher temperatures from 300 to 500 °C, indicating the enhanced reaction between Ga and oxygen species during the deposition process with the assistant of plasma at low temperature. The low temperature growth of β-Ga2O3 film paves the way to be compatible with the established lithography of semiconductor microfabrication processes.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.5118700