Direct detection of rare earth ion distributions in gallium nitride and its influence on growth morphology

The dopant distribution and surface and structural properties of Er- and Eu-doped GaN samples were investigated using atom probe tomography (APT) and atomic force microscopy (AFM). Erbium accumulation within host GaN threading dislocations was directly detected by APT allowing for the dislocations t...

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Bibliographic Details
Published in:Journal of applied physics 2020-01, Vol.127 (1)
Main Authors: Mitchell, B., Timmerman, D., Zhu, W., Lin, J. Y., Jiang, H. X., Poplawsky, J., Ishii, R., Kawakami, Y., Dierolf, V., Tatebayashi, J., Ichikawa, S., Fujiwara, Y.
Format: Article
Language:English
Subjects:
Applied physics
Atomic force microscopy
crystallographic defects
defects in semiconductors 2020
Erbium
Gallium nitrides
light emitting diodes
MATERIALS SCIENCE
Metal ions
Microscopes
Microscopy
Morphology
optical devices
Optical microscopy
Photoluminescence
photoluminescence spectroscopy
Rare earth elements
semiconductors
Threading dislocations
tomography
transmission electron microscopy
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Summary:The dopant distribution and surface and structural properties of Er- and Eu-doped GaN samples were investigated using atom probe tomography (APT) and atomic force microscopy (AFM). Erbium accumulation within host GaN threading dislocations was directly detected by APT allowing for the dislocations to be imaged in three dimensions. In addition, photoluminescence spectroscopy with high lateral resolution, by means of scanning near-field optical microscopy, was performed on Eu-doped GaN samples. By combining these results with AFM mappings of the same area, it was concluded that Eu3+ ions also accumulate at threading dislocations. Moreover, high-resolution surface profiles of both samples show that even dilute doping (
ISSN:0021-8979
1089-7550
DOI:10.1063/1.5134050