Phase transformation in MOCVD growth of (AlxGa1−x)2O3 thin films

• Published in: APL materials 2020-03, Vol.8 (3), p.031104-031104-8
• Main Authors: Bhuiyan, A F M Anhar Uddin, Feng, Zixuan, Johnson, Jared M., Huang, Hsien-Lien, Sarker, Jith, Zhu, Menglin, Karim, Md Rezaul, Mazumder, Baishakhi, Hwang, Jinwoo, Zhao, Hongping
• Format: Article
• Language: English
• ISSN: 2166-532X; 2166-532X
• DOI: 10.1063/1.5140345

This paper investigated the growth of (AlxGa1−x)2O3 thin films on semi-insulating (010) Ga2O3 substrates over the entire Al composition range (0% < x ≤ 100%) via metalorganic chemical vapor deposition (MOCVD). For the Al composition x < 27%, high quality single phase β-(AlxGa1−x)2O3 was achieved. A mixture of β and γ phases existed in (AlxGa1−x)2O3 when Al composition ranged between 27% and 40%, whereas a single γ-phase was observed for the films with Al composition x > 40%. The transition from the β to γ phase in AlGaO alloys was observed from x-ray diffraction spectra. The growth of γ-phase AlGaO with higher Al content was further confirmed via atomic resolution scanning transmission electron microscopy imaging and nanodiffraction. Compositional and statistical analyses performed on data acquired from atom probe tomography provided insight on the local compositional homogeneity in AlGaO films with different Al compositions. For AlGaO with pure β or γ phases, the Al composition distribution showed homogeneity with similar Al composition values as extracted from the x-ray diffraction peak positions. For AlGaO films with mixed β and γ phases, inhomogeneity in the Al composition distribution became more obvious in the nm scale. A mechanism was proposed for the observed phase transformation between β and γ phases in MOCVD growth of AlGaO films.