Experimental observations of the effects of oxide charge inhomogeneity on fast surface state density from high−frequency MOS capacitance−voltage characteristics

It is demonstrated experimentally that the observed surface density of state peaks near the band edges, obtained from the Terman analysis of the capacitance−voltage characteristics of silicon MOS capacitors, can be attributed to areal inhomogeneities of oxide charges. An excellent quantitative match...

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Bibliographic Details
Published in:Applied physics letters 1975-01, Vol.26 (7), p.378-380
Main Authors: McNutt, M. J., Sah, C. T.
Format: Article
Language:English
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Summary:It is demonstrated experimentally that the observed surface density of state peaks near the band edges, obtained from the Terman analysis of the capacitance−voltage characteristics of silicon MOS capacitors, can be attributed to areal inhomogeneities of oxide charges. An excellent quantitative match between theory and experiment is obtained after an extension of the theory of the C−V characteristics of inhomogeneous samples to include the real surface state densities.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.88175