EPR characterization of optical-quality AgGaS2 grown from the melt

The EPR study of optical-quality AgGaS2 has proven the existence of the point defects Ni3+, Fen+, (n⩽2), a shallow donor (ED

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Bibliographic Details
Published in:Applied physics letters 1978-01, Vol.32 (11), p.741-744
Main Authors: von Bardeleben, H. J., Goltzené, A., Schwab, C., Feigelson, R. S.
Format: Article
Language:English
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Summary:The EPR study of optical-quality AgGaS2 has proven the existence of the point defects Ni3+, Fen+, (n⩽2), a shallow donor (ED
ISSN:0003-6951
1077-3118
DOI:10.1063/1.89906