Ion-implanted InGaAsP avalanche photodiode

High-quantum-efficiency planar and mesa InGaAsP avalanche photodiodes have been fabricated by beryllium ion implantation. The implanted diodes, after suitable annealing, exhibited a very low dark current density of 4.0×10−6 A/cm2 at 10 V. The devices have 65% external quantum efficiency at 1.06 μm w...

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Bibliographic Details
Published in:Applied physics letters 1978-12, Vol.33 (11), p.920-922
Main Authors: Law, H. D., Tomasetta, L. R., Nakano, K.
Format: Article
Language:English
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Summary:High-quantum-efficiency planar and mesa InGaAsP avalanche photodiodes have been fabricated by beryllium ion implantation. The implanted diodes, after suitable annealing, exhibited a very low dark current density of 4.0×10−6 A/cm2 at 10 V. The devices have 65% external quantum efficiency at 1.06 μm without an antireflection coating and a uniform avalanche gain of 12.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.90218