cw Ar+ laser annealing of optically active impurities in nitrogen-implanted Al x Ga1− x As ( x =0.58)

Laser annealing of nitrogen implanted AlxGa1−xAs was carried out by using an Ar+ laser. A reliable and well-controlled annealing was performed with threshold power density of the order of 105 W/cm2. Photoluminescence (PL) characteristics show that laser annealing is superior to thermal annealing in...

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Bibliographic Details
Published in:Applied physics letters 1979-10, Vol.35 (8), p.633-636
Main Authors: Makita, Yunosuke, Yokota, Masaki, Nojiri, Hidetoshi, Tsurushima, Toshio, Tanoue, Hisao, Kanayama, Toshihiko, Shimada, Jun-ichi
Format: Article
Language:English
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Summary:Laser annealing of nitrogen implanted AlxGa1−xAs was carried out by using an Ar+ laser. A reliable and well-controlled annealing was performed with threshold power density of the order of 105 W/cm2. Photoluminescence (PL) characteristics show that laser annealing is superior to thermal annealing in terms of PL intensities and the absence of deep levels. New emission bands were obtained at the intermediate power density of the laser, which were never obtained in thermal annealing.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.91233