Implantation of shallow impurities in Cr-doped semi-insulating GaAs

Zinc and selenium implantations have been performed in Cr-doped semi-insulating GaAs. We show that all zinc and selenium implanted impurities are electrically active after annealing at 900 °C. But, in addition to the implantation distribution, there is a distribution induced by the chromium outdiffu...

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Bibliographic Details
Published in:Applied physics letters 1979-11, Vol.35 (9), p.699-701
Main Authors: Favennec, P. N., L’Haridon, H.
Format: Article
Language:English
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Summary:Zinc and selenium implantations have been performed in Cr-doped semi-insulating GaAs. We show that all zinc and selenium implanted impurities are electrically active after annealing at 900 °C. But, in addition to the implantation distribution, there is a distribution induced by the chromium outdiffusion during annealing leading to a Cr-depleted zone, which can become conductive. By taking into account these distributions, the electrical measurements may be explained.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.91259