Low Schottky barrier of rare-earth silicide on n -Si

Disilicide of rare-earth metals (Dy, Er, Ho, and Gd) and Y have been formed by reacting the metallic film on both n- and p-type silicons at around 350 °C for Schottky-barrier height measurement using I-V technique. A passivation coating of W, or Pt, or both was used to prevent the rare earth from ox...

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Bibliographic Details
Published in:Applied physics letters 1981-04, Vol.38 (8), p.626-628
Main Authors: Tu, K. N., Thompson, R. D., Tsaur, B. Y.
Format: Article
Language:English
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Summary:Disilicide of rare-earth metals (Dy, Er, Ho, and Gd) and Y have been formed by reacting the metallic film on both n- and p-type silicons at around 350 °C for Schottky-barrier height measurement using I-V technique. A passivation coating of W, or Pt, or both was used to prevent the rare earth from oxidation. Schottky-barrier heights of about 0.4 eV on n-Si and 0.7 eV on p-Si were determined.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.92457