Velocity field characteristics of minority carriers (electrons) in p -In0.53Ga0.47As

Steady-state velocity field characteristics for photoexcited minority electrons in p-In0.53Ga0.47As are reported. A low-field drift mobility of 6000 cm2/V s for ∼1017 cm−3 impurities and a high-field drift velocity of 2.6×107 cm/s at 7.5 kv/cm are found. There is no evidence of transferred electron...

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Published in:Applied physics letters 1981-10, Vol.39 (7), p.569-572
Main Authors: Degani, J., Leheny, R. F., Nahory, R. E., Heritage, J. P.
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Language:English
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cited_by cdi_FETCH-LOGICAL-c289t-9470d37dd4caf29c92be6216fbcc370db7dd9e5cb209900501c1e4d389b3d4103
cites cdi_FETCH-LOGICAL-c289t-9470d37dd4caf29c92be6216fbcc370db7dd9e5cb209900501c1e4d389b3d4103
container_end_page 572
container_issue 7
container_start_page 569
container_title Applied physics letters
container_volume 39
creator Degani, J.
Leheny, R. F.
Nahory, R. E.
Heritage, J. P.
description Steady-state velocity field characteristics for photoexcited minority electrons in p-In0.53Ga0.47As are reported. A low-field drift mobility of 6000 cm2/V s for ∼1017 cm−3 impurities and a high-field drift velocity of 2.6×107 cm/s at 7.5 kv/cm are found. There is no evidence of transferred electron effects, a result which we attribute to energy scattering by holes and which leads to an enhancement of electron drift velocity.
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fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_92797</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_92797</sourcerecordid><originalsourceid>FETCH-LOGICAL-c289t-9470d37dd4caf29c92be6216fbcc370db7dd9e5cb209900501c1e4d389b3d4103</originalsourceid><addsrcrecordid>eNotkEFLxDAUhIMouK7iX8hNPaS-l7RNc1wWXRcWvKxeS_qSYKTbLkkv--_tqqdh-IZhGMbuEQqEWj1jYaQ2-oItELQWCrG5ZAsAUKI2FV6zm5y_Z1tJpRZs_-n7keJ04iH63nH6ssnS5FPMU6TMx8APcRjTOUE2pehT5o--9zSlcchPPA78yMV2gKJSGwtFqVf5ll0F22d_969L9vH6sl-_id37Zrte7QTJxkzClBqc0s6VZIM0ZGTna4l16IjUjLoZGV9RJ8GYeTAgoS-dakynXImgluzhr5fSmHPyoT2meLDp1CK05zNabH_PUD9GDE_m</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Velocity field characteristics of minority carriers (electrons) in p -In0.53Ga0.47As</title><source>AIP Digital Archive</source><creator>Degani, J. ; Leheny, R. F. ; Nahory, R. E. ; Heritage, J. P.</creator><creatorcontrib>Degani, J. ; Leheny, R. F. ; Nahory, R. E. ; Heritage, J. P.</creatorcontrib><description>Steady-state velocity field characteristics for photoexcited minority electrons in p-In0.53Ga0.47As are reported. A low-field drift mobility of 6000 cm2/V s for ∼1017 cm−3 impurities and a high-field drift velocity of 2.6×107 cm/s at 7.5 kv/cm are found. There is no evidence of transferred electron effects, a result which we attribute to energy scattering by holes and which leads to an enhancement of electron drift velocity.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.92797</identifier><language>eng</language><ispartof>Applied physics letters, 1981-10, Vol.39 (7), p.569-572</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c289t-9470d37dd4caf29c92be6216fbcc370db7dd9e5cb209900501c1e4d389b3d4103</citedby><cites>FETCH-LOGICAL-c289t-9470d37dd4caf29c92be6216fbcc370db7dd9e5cb209900501c1e4d389b3d4103</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27922,27923</link.rule.ids></links><search><creatorcontrib>Degani, J.</creatorcontrib><creatorcontrib>Leheny, R. F.</creatorcontrib><creatorcontrib>Nahory, R. E.</creatorcontrib><creatorcontrib>Heritage, J. P.</creatorcontrib><title>Velocity field characteristics of minority carriers (electrons) in p -In0.53Ga0.47As</title><title>Applied physics letters</title><description>Steady-state velocity field characteristics for photoexcited minority electrons in p-In0.53Ga0.47As are reported. A low-field drift mobility of 6000 cm2/V s for ∼1017 cm−3 impurities and a high-field drift velocity of 2.6×107 cm/s at 7.5 kv/cm are found. There is no evidence of transferred electron effects, a result which we attribute to energy scattering by holes and which leads to an enhancement of electron drift velocity.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1981</creationdate><recordtype>article</recordtype><recordid>eNotkEFLxDAUhIMouK7iX8hNPaS-l7RNc1wWXRcWvKxeS_qSYKTbLkkv--_tqqdh-IZhGMbuEQqEWj1jYaQ2-oItELQWCrG5ZAsAUKI2FV6zm5y_Z1tJpRZs_-n7keJ04iH63nH6ssnS5FPMU6TMx8APcRjTOUE2pehT5o--9zSlcchPPA78yMV2gKJSGwtFqVf5ll0F22d_969L9vH6sl-_id37Zrte7QTJxkzClBqc0s6VZIM0ZGTna4l16IjUjLoZGV9RJ8GYeTAgoS-dakynXImgluzhr5fSmHPyoT2meLDp1CK05zNabH_PUD9GDE_m</recordid><startdate>19811001</startdate><enddate>19811001</enddate><creator>Degani, J.</creator><creator>Leheny, R. F.</creator><creator>Nahory, R. E.</creator><creator>Heritage, J. P.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19811001</creationdate><title>Velocity field characteristics of minority carriers (electrons) in p -In0.53Ga0.47As</title><author>Degani, J. ; Leheny, R. F. ; Nahory, R. E. ; Heritage, J. P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c289t-9470d37dd4caf29c92be6216fbcc370db7dd9e5cb209900501c1e4d389b3d4103</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1981</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Degani, J.</creatorcontrib><creatorcontrib>Leheny, R. F.</creatorcontrib><creatorcontrib>Nahory, R. E.</creatorcontrib><creatorcontrib>Heritage, J. P.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Degani, J.</au><au>Leheny, R. F.</au><au>Nahory, R. E.</au><au>Heritage, J. P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Velocity field characteristics of minority carriers (electrons) in p -In0.53Ga0.47As</atitle><jtitle>Applied physics letters</jtitle><date>1981-10-01</date><risdate>1981</risdate><volume>39</volume><issue>7</issue><spage>569</spage><epage>572</epage><pages>569-572</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Steady-state velocity field characteristics for photoexcited minority electrons in p-In0.53Ga0.47As are reported. A low-field drift mobility of 6000 cm2/V s for ∼1017 cm−3 impurities and a high-field drift velocity of 2.6×107 cm/s at 7.5 kv/cm are found. There is no evidence of transferred electron effects, a result which we attribute to energy scattering by holes and which leads to an enhancement of electron drift velocity.</abstract><doi>10.1063/1.92797</doi><tpages>4</tpages></addata></record>
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title Velocity field characteristics of minority carriers (electrons) in p -In0.53Ga0.47As
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-14T11%3A23%3A15IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Velocity%20field%20characteristics%20of%20minority%20carriers%20(electrons)%20in%20p%20-In0.53Ga0.47As&rft.jtitle=Applied%20physics%20letters&rft.au=Degani,%20J.&rft.date=1981-10-01&rft.volume=39&rft.issue=7&rft.spage=569&rft.epage=572&rft.pages=569-572&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.92797&rft_dat=%3Ccrossref%3E10_1063_1_92797%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c289t-9470d37dd4caf29c92be6216fbcc370db7dd9e5cb209900501c1e4d389b3d4103%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true