Electron mobility enhancement in epitaxial multilayer Si-Si1− x Ge x alloy films on (100) Si

Enhanced Hall-effect mobilities have been measured in epitaxial (100)-oriented multilayer n-type Si/Si1−xGex films grown on single-crystal Si substrates by chemical vapor deposition. Mobilities from ∼20 to 40% higher than that of epitaxial Si layers and ∼100% higher than that of epitaxial SiGe layer...

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Bibliographic Details
Published in:Applied physics letters 1982-09, Vol.41 (5), p.464-466
Main Authors: Manasevit, H. M., Gergis, I. S., Jones, A. B.
Format: Article
Language:English
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Summary:Enhanced Hall-effect mobilities have been measured in epitaxial (100)-oriented multilayer n-type Si/Si1−xGex films grown on single-crystal Si substrates by chemical vapor deposition. Mobilities from ∼20 to 40% higher than that of epitaxial Si layers and ∼100% higher than that of epitaxial SiGe layers on Si were measured for the doping range ∼8×1015–∼1017 cm−3. The mobilities of multilayer Si/SiGe films approach that of single-crystal Si films at ∼2×1017 cm−3. No mobility enhancement was observed in multilayer p-type (100) films and n-type (111)-oriented films. Experimental studies included the effects upon film properties of layer composition, total film thickness, doping concentrations, layer thicknesses, and growth temperature.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.93533