Optical heating of electron-hole plasma in silicon by picosecond pulses

Using a novel three-pulse technique, essential information about the density, optical effective mass, and kinetics of laser-generated plasmas in silicon has been obtained.

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Published in:Applied physics letters 1984, Vol.44 (1), p.3-5
Main Authors: LOMPRE, L.-A, LIU, J.-M, KURZ, H, BLOEMBERGEN, N
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of bulk materials and thin films
Physics
Thermooptical and photothermal effects
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description Using a novel three-pulse technique, essential information about the density, optical effective mass, and kinetics of laser-generated plasmas in silicon has been obtained.
doi_str_mv 10.1063/1.94543
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subjects Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of bulk materials and thin films
Physics
Thermooptical and photothermal effects
title Optical heating of electron-hole plasma in silicon by picosecond pulses
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