Polyimide passivation of In0.53Ga0.47As, InP, and InGaAsP/InP p-n junction structures

Techniques for passivating In0.53Ga0.47As, InGaAsP, InP, and InGaAsP/InP p-n junction structures with polyimide have been developed. Low stable leakage current is maintained for prolonged bias, even after exposure to high temperatures (∼320 °C) during packaging. 150-μm-diam In0.53Ga0.47As photodiode...

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Bibliographic Details
Published in:Applied physics letters 1984, Vol.44 (1), p.145-147
Main Authors: YEATS, R, VON DESSONNECK, K
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:Techniques for passivating In0.53Ga0.47As, InGaAsP, InP, and InGaAsP/InP p-n junction structures with polyimide have been developed. Low stable leakage current is maintained for prolonged bias, even after exposure to high temperatures (∼320 °C) during packaging. 150-μm-diam In0.53Ga0.47As photodiodes with a breakdown voltage of ∼50 V were passivated with polyimide and were found to consistently have leakage currents of ∼10 nA at a 20-V bias.Details of the passivation process are given.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.94583