Organometallic vapor phase epitaxial growth of GaAs0.5Sb0.5

The pseudobinary III/V system GaAs1−ySby is well known to have a solid phase miscibility gap with a critical temperature of 751 °C. We have succeeded in growing epitaxial layers of GaAs0.5Sb0.5 lattice matched to InP at temperatures of 600 and 630 °C using the organometallic vapor phase epitaxy tech...

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Bibliographic Details
Published in:Applied physics letters 1984-04, Vol.44 (7), p.677-679
Main Authors: CHERNG, M. J, STRINGFELLOW, G. G, COHEN, R. M
Format: Article
Language:English
Subjects:
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
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Summary:The pseudobinary III/V system GaAs1−ySby is well known to have a solid phase miscibility gap with a critical temperature of 751 °C. We have succeeded in growing epitaxial layers of GaAs0.5Sb0.5 lattice matched to InP at temperatures of 600 and 630 °C using the organometallic vapor phase epitaxy technique. The key requirement is a III/V ratio of greater than unity. This leads to the incorporation of all As and Sb reaching the interface and the ability to grow metastable alloys. The epitaxial GaAs0.5Sb0.5 layers have excellent surface morphology and efficient photoluminescence at a wavelength of 1.6  μm.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.94874