Rapid thermal annealing characteristics of As+- and BF+2 -implanted Si

• Published in: Applied physics letters 1984-07, Vol.45 (1), p.77-79
• Main Authors: Kwor, R., Kwong, D. L., Yeo, Y. K.
• Format: Article
• Language: English
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.94975

The electrical properties and distribution of impurities in As+- and BF+2 -implanted Si activated using rapid thermal annealing (RTA) are discussed. Sheet mobility and activation of the implanted Si 〈100〉 samples (As+: 60 keV, 1×1015 cm−2 and BF+2 : 45 keV, 1×1015 cm−2) as functions of annealing temperature are reported for RTA. Secondary ion mass spectroscopy atomic profiles of samples preannealed at 600 °C in furnace, followed by RTA are presented. Full electrical activation of As occurs at 1100 °C and that for B (BF2) occurs at 950 °C. A 600 °C, 1-h furnace preanneal does not have any noticeable effect on reducing the dopant redistribution during 2-s, 1170 °C RTA for 1×1015 cm−2 As+ implants and during 2-s, 1100 °C RTA for 1×1015 cm−2 BF+2 implants. This lack of ‘‘diffusion difference’’ is attributed to the high RTA temperatures at which mechanisms other than the point defects caused early time enhanced diffusion play a dominant role in impurity redistribution.