Direct evidence for the role of gold migration in the formation of dark-spot defects in 1.3-μm InP/InGaAsP light-emitting diodes

The results of our previous study of dark-spot defects (DSD’s) in aged 1.3-μm InP/InGaAsP light-emitting diodes (LED’s) have strongly suggested that the defects form as a result of the migration of gold from the p contact into various epitaxial layers. To provide further support for this degradation...

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Bibliographic Details
Published in:Applied physics letters 1984-01, Vol.45 (1), p.37-39
Main Authors: CHIN, A. K, ZIPFEL, C. L, GEVA, M, CAMLIBEL, I, SKEATH, P, CHIN, B. H
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:The results of our previous study of dark-spot defects (DSD’s) in aged 1.3-μm InP/InGaAsP light-emitting diodes (LED’s) have strongly suggested that the defects form as a result of the migration of gold from the p contact into various epitaxial layers. To provide further support for this degradation mechanism, we compare, in this study, the formation of DSD’s in LED’s fabricated with the usual BeAu p metallization and a new platinum p contact. After accelerated aging (200 °C junction temperature, 20 kA/cm2, 3×103 h), DSD’s were observed only in the devices with BeAu contacts, thus directly identifying the active role of gold migration in DSD formation.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.94995