Influence of energy transfer in nuclear collisions on the ion beam annealing of amorphous layers in silicon

Amorphous surface layers produced by ion bombardment in silicon on sapphire have been ion beam annealed at 300 °C. The annealing behavior has been found to be dependent on the part of the ion energy transferred in nuclear collisions.

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Published in:Applied physics letters 1984-11, Vol.45 (10), p.1116-1118
Main Authors: Holmén, G., Linnros, J., Svensson, B.
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Language:English
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creator Holmén, G.
Linnros, J.
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description Amorphous surface layers produced by ion bombardment in silicon on sapphire have been ion beam annealed at 300 °C. The annealing behavior has been found to be dependent on the part of the ion energy transferred in nuclear collisions.
doi_str_mv 10.1063/1.95037
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title Influence of energy transfer in nuclear collisions on the ion beam annealing of amorphous layers in silicon
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