Beam energy effects in electron beam lithography: the range and intensity of backscattered exposure

The range and intensity of backscattered exposure from a silicon substrate were measured as a function of incident electron energy. The range is proportional to the energy to the 1.7 power. The integrated energy deposited at the silicon surface by backscattered electrons is about 0.8 of the energy d...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 1984-09, Vol.45 (6), p.698-700
Main Authors: JACKEL, L. D, HOWARD, R. E, MANKIEWICH, P. M, CRAIGHEAD, H. G, EPWORTH, R. W
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The range and intensity of backscattered exposure from a silicon substrate were measured as a function of incident electron energy. The range is proportional to the energy to the 1.7 power. The integrated energy deposited at the silicon surface by backscattered electrons is about 0.8 of the energy deposited by the incident electrons and is nearly independent of the incident beam electron energy. These results show that the severity of the proximity effect, the exposure of regions not addressed by the beam, can be reduced by using high beam energy since the backscattered electrons are spread over a distance much larger than minimum feature sizes.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.95361