UV laser-generated fluorine atom etching of polycrystalline Si, Mo, and Ti

Fluorine atoms, generated by the 193-nm ArF laser photolysis of carbonyl difluoride, have been shown to be capable of efficiently and selectively etching polycrystalline silicon deposited on silicon dioxide. The highly specific and rapid removal of either molybdenum or titanium deposited on silicon...

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Bibliographic Details
Published in:Applied physics letters 1985-04, Vol.46 (7), p.654-656
Main Authors: LOPER, G. L, TABAT, M. D
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:Fluorine atoms, generated by the 193-nm ArF laser photolysis of carbonyl difluoride, have been shown to be capable of efficiently and selectively etching polycrystalline silicon deposited on silicon dioxide. The highly specific and rapid removal of either molybdenum or titanium deposited on silicon dioxide has been demonstrated with fluorine atoms produced by the ArF laser photolysis of nitrogen trifluoride.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.95518