GaSb0.5As0.5/Al0.35Ga0.65Sb0.48As0.52 superlattice lattice matched to InP prepared by molecular beam epitaxy

We have shown, against conventional belief, for the first time that high quality GaSb0.5As0.5/Al0.35Ga0.65Sb0.48As0.52 superlattices lattice matched to InP substrate can be grown by molecular beam epitaxy in spite of the existence of extensive miscibility gap in this material system. The superlattic...

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Bibliographic Details
Published in:Applied physics letters 1985-04, Vol.46 (7), p.659-661
Main Authors: TSANG, W. T, CHIU, T. H, CHU, S. N. G, DITZENBERGER, J. A
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Vacuum deposition
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Summary:We have shown, against conventional belief, for the first time that high quality GaSb0.5As0.5/Al0.35Ga0.65Sb0.48As0.52 superlattices lattice matched to InP substrate can be grown by molecular beam epitaxy in spite of the existence of extensive miscibility gap in this material system. The superlattices have excellent heterointerfaces as examined by in situ reflection high-energy electron diffraction during growth and transmission electron microscope afterwards. The surface morphology was smooth and mirrorlike as observed under Nomarski phase contrast microscope when lattice mismatch Δa/a was ≲1×10−3. These superlattices exhibited a 40 times more intense room-temperature photoluminescence than high quality GaSb05As05 single epilayers. Quantum size effect was also observed for the first time in these new superlattices.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.95520