Very low threshold buried ridge structure lasers emitting at 1.3μm grown by low pressure metalorganic chemical vapor deposition

GaInAsP-InP buried ridge structure lasers emitting at 1.3 μm have been fabricated on material grown completely by low pressure metalorganic chemical vapor deposition. These lasers have low threshold (11 mA), exhibit linear (kink-free) light-current characteristics up to high powers (10 mW/facets), a...

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Bibliographic Details
Published in:Applied physics letters 1985-01, Vol.46 (2), p.131-133
Main Authors: RAZEGHI, M, BLONDEAU, R, KAZMIERSKI, K, KRAKOWSKI, M, DUCHEMIN, J. P
Format: Article
Language:English
Subjects:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers
laser diodes
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Summary:GaInAsP-InP buried ridge structure lasers emitting at 1.3 μm have been fabricated on material grown completely by low pressure metalorganic chemical vapor deposition. These lasers have low threshold (11 mA), exhibit linear (kink-free) light-current characteristics up to high powers (10 mW/facets), and can be operated at high temperatures (70 °C). Excellent uniformity over 10 cm2 has been obtained, and an external quantum efficiency of 60% for two faces has been measured.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.95710