Direct observation of an enhanced concentration of the principal deep level EL2 at single dislocations

Regions of low dislocation density (∼5×102 cm−2) in 2-mm-thick {001} wafers from indium doped, liquid encapsulated Czochralski grown, 2-in-diam. GaAs ingots have been examined by transmission infrared microscopy. Discrete dislocations were located and identified by their etching behavior in the cali...

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Bibliographic Details
Published in:Applied physics letters 1985-06, Vol.46 (11), p.1066-1068
Main Authors: STIRLAND, D. J, BROZEL, M. R, GRANT, I
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron states
Exact sciences and technology
Impurity and defect levels
Physics
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Summary:Regions of low dislocation density (∼5×102 cm−2) in 2-mm-thick {001} wafers from indium doped, liquid encapsulated Czochralski grown, 2-in-diam. GaAs ingots have been examined by transmission infrared microscopy. Discrete dislocations were located and identified by their etching behavior in the calibrated A/B etchant. Comparison of identical regions before and after etching showed that increased absorption at 1 μm occurred at the sites of each dislocation. The results demonstrate directly that enhancement of [EL2], the concentration of the deep donor level EL2, occurs at single dislocations.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.95762