Conductive layer formation by high-dose Si ion implantation into SiO2

It is found that a conductive layer in SiO2 is formed by high-dose Si ion implantation followed by As ion implantation into SiO2. Sheet resistance of the Si-implanted SiO2 layer changes from 1010 to 103 Ω/⧠ according to ion implantation conditions and annealing temperature. Auger electron spectrosco...

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Bibliographic Details
Published in:Applied physics letters 1985-05, Vol.46 (9), p.879-881
Main Authors: MIYAKE, M, KIUCHI, K
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
Doping and impurity implantation in iii-v and ii-vi semiconductors
Exact sciences and technology
Physics
Structure of solids and liquids
crystallography
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Summary:It is found that a conductive layer in SiO2 is formed by high-dose Si ion implantation followed by As ion implantation into SiO2. Sheet resistance of the Si-implanted SiO2 layer changes from 1010 to 103 Ω/⧠ according to ion implantation conditions and annealing temperature. Auger electron spectroscopy analysis and reflecting electron diffraction show that the Si-implanted layer consists of both polycrystalline Si and amorphous Si.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.95873