Elimination of ionized impurity scattering in heavily doped Ga x In1− x As y P1− y

Unexpectedly high hole mobilities occur in p-type layers of Ga0.03In0.97As0.07P0.93 grown by liquid phase epitaxy and concurrently doped with high concentrations (1017–1019 cm−3) of Mn and Ge. The temperature dependence of the hole mobility indicates that ionized impurity scattering is insignificant...

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Bibliographic Details
Published in:Applied physics letters 1985-10, Vol.47 (8), p.843-845
Main Authors: Shantharama, L. G., Adams, A. R., Allen, E. M., Greene, P. D.
Format: Article
Language:English
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Summary:Unexpectedly high hole mobilities occur in p-type layers of Ga0.03In0.97As0.07P0.93 grown by liquid phase epitaxy and concurrently doped with high concentrations (1017–1019 cm−3) of Mn and Ge. The temperature dependence of the hole mobility indicates that ionized impurity scattering is insignificant. The effect is attributed to the diffusion of neutral Mn to form donor-acceptor complexes instead of isolated ionized donors and acceptors. Such a model is consistent with observed diffusion profiles into a variety of substrates from Mn-doped epilayers and the presence of ionized impurity scattering where either the donor concentration or the depth of the Mn acceptor level is such that little or no neutral Mn is present.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.96004