Pair-groove-substrate GaAs/AlGaAs multiquantum well lasers by molecular beam epitaxy

We investigated molecular beam epitaxial growth characteristics on (001) GaAs substrates with a pair of etched grooves along the 〈11̄0〉 direction. It is found that, as the growth proceeds, the mesa width between the pair of grooves gradually decreases and that the grown mesa surface becomes slightly...

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Bibliographic Details
Published in:Applied physics letters 1985-10, Vol.47 (7), p.728-731
Main Authors: MANNOH, M, YUASA, T, NARITSUKA, S, SHINOZAKI, K, ISHII, M
Format: Article
Language:English
Subjects:
Applied sciences
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Other techniques and industries
Physics
Semiconductor lasers
laser diodes
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Summary:We investigated molecular beam epitaxial growth characteristics on (001) GaAs substrates with a pair of etched grooves along the 〈11̄0〉 direction. It is found that, as the growth proceeds, the mesa width between the pair of grooves gradually decreases and that the grown mesa surface becomes slightly concave. These results offer great advantages for precisely defining the lateral width of index guided lasers during growth. A pair-groove-substrate GaAs/AlGaAs multiquantum well laser has been newly developed, which shows stable fundamental transverse mode oscillation and a high external differential quantum efficiency of 68% as well as a low threshold current of 23 mA.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.96018