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Differential surface photovoltage measurement of minority-carrier diffusion length in thin films
A new surface photovoltage technique is introduced for the determination of the minority-carrier diffusion length in thin semiconductor films. The technique eliminates the effect of a back surface barrier on the measurement by separating out the back barrier contribution to the total photovoltage si...
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Published in: | Applied physics letters 1985-01, Vol.47 (7), p.740-742 |
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Main Authors: | , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | A new surface photovoltage technique is introduced for the determination of the minority-carrier diffusion length in thin semiconductor films. The technique eliminates the effect of a back surface barrier on the measurement by separating out the back barrier contribution to the total photovoltage signal. With a direct difference method based on a double lock-in technique, the measurement can be carried out in a single run. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.96023 |