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Differential surface photovoltage measurement of minority-carrier diffusion length in thin films

A new surface photovoltage technique is introduced for the determination of the minority-carrier diffusion length in thin semiconductor films. The technique eliminates the effect of a back surface barrier on the measurement by separating out the back barrier contribution to the total photovoltage si...

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Bibliographic Details
Published in:Applied physics letters 1985-01, Vol.47 (7), p.740-742
Main Authors: SCHWARZ, R, SLOBODIN, D, WAGNER, S
Format: Article
Language:English
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Summary:A new surface photovoltage technique is introduced for the determination of the minority-carrier diffusion length in thin semiconductor films. The technique eliminates the effect of a back surface barrier on the measurement by separating out the back barrier contribution to the total photovoltage signal. With a direct difference method based on a double lock-in technique, the measurement can be carried out in a single run.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.96023