Differential surface photovoltage measurement of minority-carrier diffusion length in thin films

A new surface photovoltage technique is introduced for the determination of the minority-carrier diffusion length in thin semiconductor films. The technique eliminates the effect of a back surface barrier on the measurement by separating out the back barrier contribution to the total photovoltage si...

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Published in:Applied physics letters 1985-01, Vol.47 (7), p.740-742
Main Authors: SCHWARZ, R, SLOBODIN, D, WAGNER, S
Format: Article
Language:English
Subjects:
Applied sciences
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic transport in condensed matter
Exact sciences and technology
Other techniques and industries
Photoconduction and photovoltaic effects
photodielectric effects
Physics
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description A new surface photovoltage technique is introduced for the determination of the minority-carrier diffusion length in thin semiconductor films. The technique eliminates the effect of a back surface barrier on the measurement by separating out the back barrier contribution to the total photovoltage signal. With a direct difference method based on a double lock-in technique, the measurement can be carried out in a single run.
doi_str_mv 10.1063/1.96023
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ispartof Applied physics letters, 1985-01, Vol.47 (7), p.740-742
issn 0003-6951
1077-3118
language eng
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source AIP Digital Archive
subjects Applied sciences
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic transport in condensed matter
Exact sciences and technology
Other techniques and industries
Photoconduction and photovoltaic effects
photodielectric effects
Physics
title Differential surface photovoltage measurement of minority-carrier diffusion length in thin films
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