GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxy

We describe optical properties of single and multiple quantum well structures grown by gas source molecular beam epitaxy. Absorption and photoluminescence were used in conjunction with x-ray and transmission electron microscopy techniques to determine the confined particle energy levels and well thi...

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Bibliographic Details
Published in:Applied physics letters 1985-08, Vol.47 (4), p.394-396
Main Authors: TEMKIN, H, PANISH, M. B, PETROFF, P. M, HAMM, R. A, VANDENBERG, J. M, SUMSKI, S
Format: Article
Language:English
Subjects:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers
laser diodes
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Summary:We describe optical properties of single and multiple quantum well structures grown by gas source molecular beam epitaxy. Absorption and photoluminescence were used in conjunction with x-ray and transmission electron microscopy techniques to determine the confined particle energy levels and well thicknesses. Well defined exciton transitions were observed in the ternary and quaternary well superlattices even above room temperature. In single well structures energy shifts as large as 260 and 370 meV were observed for GaInAs and GaInAsP wells, respectively. On the basis of these results we estimated that over 50% of the InGaAs/InP band discontinuity resides in the conduction band.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.96178