Photo-assisted anisotropic etching of phosphorus-doped polycrystalline silicon employing reactive species generated by a microwave discharge

An anisotropic etching of heavily phosphorus-doped polycrystalline silicon is achieved by protecting the etched sidewall with polymerized film which results from the reaction of chlorine species and methyl methacrylate. Chlorine species are generated by a microwave discharge in Cl2 in the portion se...

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Bibliographic Details
Published in:Applied physics letters 1986-04, Vol.48 (17), p.1165-1166
Main Authors: HAYASAKA, N, OKANO, H, SEKINE, M, HORIIKE, Y
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:An anisotropic etching of heavily phosphorus-doped polycrystalline silicon is achieved by protecting the etched sidewall with polymerized film which results from the reaction of chlorine species and methyl methacrylate. Chlorine species are generated by a microwave discharge in Cl2 in the portion separated from a reaction chamber with a laser beam irradiation system. The laser beam enhances the removal of the polymerized film on the illuminated surface except the sidewall. And the Si/SiO2 etch rate ratio is infinite in this system.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.96458