Anomalous temperature dependence of lattice parameters of metalorganic chemical vapor deposition CdTe grown on GaAs

• Published in: Applied physics letters 1986-04, Vol.48 (15), p.994-996
• Main Authors: STAUDENMANN, J.-L, HORNING, R. D, KNOX, R. D, ARCH, D. K, SCHMIT, J. L
• Format: Article
• Language: English
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Physics; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.96635

It is reported that the lattice parameters of a 3-μm-thick [1,0,0] single crystal CdTe epitaxial layer on a [1,0,0] single crystal GaAs substrate behave anomalously below 120 K. The epilayer used in this experiment was deposited at 410 °C by metalorganic chemical vapor deposition. This x-ray lattice parameter study was done in the temperature range between about 8 and 300 K. Our results show that the lattice parameters perpendicular to the surface of both the GaAs substrate and the CdTe epilayer shrink four times more than the corresponding bulks when the samples are cooled down to 10 K. It is further seen that there is no compensation effect between the elements of the composite system; that is, the lattice parameters of the two materials change in the same direction as if the composite system—the epilayer and the thickness of the substrate which is probed by the x rays—would behave as a new material with entirely new physical properties.