Amorphous carbon films as resist masks with high reactive ion etching resistance for nanometer lithography

We propose the application of carbon films as resist masks for practical nanometer lithography involving reactive ion etching (RIE). Amorphous carbon films prepared by room-temperature plasma chemical vapor deposition show a very high resistance against RIE, the etching rates being less than 1/2 of...

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Bibliographic Details
Published in:Applied physics letters 1986-03, Vol.48 (13), p.835-837
Main Authors: KAKUCHI, M, HIKITA, M, TAMAMURA, T
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Other techniques and industries
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:We propose the application of carbon films as resist masks for practical nanometer lithography involving reactive ion etching (RIE). Amorphous carbon films prepared by room-temperature plasma chemical vapor deposition show a very high resistance against RIE, the etching rates being less than 1/2 of that of a novolak-based conventional photoresist. The carbon films can be finely patterned by O2 RIE in a bilayer resist process using a high-resolution silicone-based negative resist. Nanometer patterns as small as 40 nm are fabricated on a thick solid substrate, and can be transferred into the substrate layer directly by RIE.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.96683