Amorphous carbon films as resist masks with high reactive ion etching resistance for nanometer lithography

We propose the application of carbon films as resist masks for practical nanometer lithography involving reactive ion etching (RIE). Amorphous carbon films prepared by room-temperature plasma chemical vapor deposition show a very high resistance against RIE, the etching rates being less than 1/2 of...

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Published in:Applied physics letters 1986-03, Vol.48 (13), p.835-837
Main Authors: KAKUCHI, M, HIKITA, M, TAMAMURA, T
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Other techniques and industries
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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cited_by cdi_FETCH-LOGICAL-c281t-55edd4f3c9cf8f0a9ecae59c45c9a938e79cfef8ad7dc283c5e6410e5202afec3
cites cdi_FETCH-LOGICAL-c281t-55edd4f3c9cf8f0a9ecae59c45c9a938e79cfef8ad7dc283c5e6410e5202afec3
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container_title Applied physics letters
container_volume 48
creator KAKUCHI, M
HIKITA, M
TAMAMURA, T
description We propose the application of carbon films as resist masks for practical nanometer lithography involving reactive ion etching (RIE). Amorphous carbon films prepared by room-temperature plasma chemical vapor deposition show a very high resistance against RIE, the etching rates being less than 1/2 of that of a novolak-based conventional photoresist. The carbon films can be finely patterned by O2 RIE in a bilayer resist process using a high-resolution silicone-based negative resist. Nanometer patterns as small as 40 nm are fabricated on a thick solid substrate, and can be transferred into the substrate layer directly by RIE.
doi_str_mv 10.1063/1.96683
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fullrecord <record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_96683</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>8105541</sourcerecordid><originalsourceid>FETCH-LOGICAL-c281t-55edd4f3c9cf8f0a9ecae59c45c9a938e79cfef8ad7dc283c5e6410e5202afec3</originalsourceid><addsrcrecordid>eNqFkEFLxDAQhYMouK7iX8hB8NQ1aZo2OS6LrsKCFz2XMZ1ss7ZNSaqy_97oLl49DTPzvQfvEXLN2YKzUtzxhS5LJU7IjLOqygTn6pTMGGMiK7Xk5-Qixl1aZS7EjOyWvQ9j6z8iNRDe_ECt6_pIIdKA0cWJ9hDfI_1yU0tbt23TGczkPpG6BONkWjdsjywMBqn1gQ4w-B4nDLRLOr8NMLb7S3JmoYt4dZxz8vpw_7J6zDbP66fVcpOZXPEpkxKbprDCaGOVZaDRAEptCmk0aKGwSg-0CpqqSQphJJYFZyhzloNFI-bk9uBrgo8xoK3H4HoI-5qz-qeimte_FSXy5kCOEA10NqQALv7hijMpC_4vxqpS8lx8A8l_dTQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Amorphous carbon films as resist masks with high reactive ion etching resistance for nanometer lithography</title><source>AIP Digital Archive</source><creator>KAKUCHI, M ; HIKITA, M ; TAMAMURA, T</creator><creatorcontrib>KAKUCHI, M ; HIKITA, M ; TAMAMURA, T</creatorcontrib><description>We propose the application of carbon films as resist masks for practical nanometer lithography involving reactive ion etching (RIE). Amorphous carbon films prepared by room-temperature plasma chemical vapor deposition show a very high resistance against RIE, the etching rates being less than 1/2 of that of a novolak-based conventional photoresist. The carbon films can be finely patterned by O2 RIE in a bilayer resist process using a high-resolution silicone-based negative resist. Nanometer patterns as small as 40 nm are fabricated on a thick solid substrate, and can be transferred into the substrate layer directly by RIE.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.96683</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Microelectronic fabrication (materials and surfaces technology) ; Other techniques and industries ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>Applied physics letters, 1986-03, Vol.48 (13), p.835-837</ispartof><rights>1987 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c281t-55edd4f3c9cf8f0a9ecae59c45c9a938e79cfef8ad7dc283c5e6410e5202afec3</citedby><cites>FETCH-LOGICAL-c281t-55edd4f3c9cf8f0a9ecae59c45c9a938e79cfef8ad7dc283c5e6410e5202afec3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=8076512$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=8105541$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>KAKUCHI, M</creatorcontrib><creatorcontrib>HIKITA, M</creatorcontrib><creatorcontrib>TAMAMURA, T</creatorcontrib><title>Amorphous carbon films as resist masks with high reactive ion etching resistance for nanometer lithography</title><title>Applied physics letters</title><description>We propose the application of carbon films as resist masks for practical nanometer lithography involving reactive ion etching (RIE). Amorphous carbon films prepared by room-temperature plasma chemical vapor deposition show a very high resistance against RIE, the etching rates being less than 1/2 of that of a novolak-based conventional photoresist. The carbon films can be finely patterned by O2 RIE in a bilayer resist process using a high-resolution silicone-based negative resist. Nanometer patterns as small as 40 nm are fabricated on a thick solid substrate, and can be transferred into the substrate layer directly by RIE.</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Other techniques and industries</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1986</creationdate><recordtype>article</recordtype><recordid>eNqFkEFLxDAQhYMouK7iX8hB8NQ1aZo2OS6LrsKCFz2XMZ1ss7ZNSaqy_97oLl49DTPzvQfvEXLN2YKzUtzxhS5LJU7IjLOqygTn6pTMGGMiK7Xk5-Qixl1aZS7EjOyWvQ9j6z8iNRDe_ECt6_pIIdKA0cWJ9hDfI_1yU0tbt23TGczkPpG6BONkWjdsjywMBqn1gQ4w-B4nDLRLOr8NMLb7S3JmoYt4dZxz8vpw_7J6zDbP66fVcpOZXPEpkxKbprDCaGOVZaDRAEptCmk0aKGwSg-0CpqqSQphJJYFZyhzloNFI-bk9uBrgo8xoK3H4HoI-5qz-qeimte_FSXy5kCOEA10NqQALv7hijMpC_4vxqpS8lx8A8l_dTQ</recordid><startdate>19860331</startdate><enddate>19860331</enddate><creator>KAKUCHI, M</creator><creator>HIKITA, M</creator><creator>TAMAMURA, T</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19860331</creationdate><title>Amorphous carbon films as resist masks with high reactive ion etching resistance for nanometer lithography</title><author>KAKUCHI, M ; HIKITA, M ; TAMAMURA, T</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c281t-55edd4f3c9cf8f0a9ecae59c45c9a938e79cfef8ad7dc283c5e6410e5202afec3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1986</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>Other techniques and industries</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>KAKUCHI, M</creatorcontrib><creatorcontrib>HIKITA, M</creatorcontrib><creatorcontrib>TAMAMURA, T</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>KAKUCHI, M</au><au>HIKITA, M</au><au>TAMAMURA, T</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Amorphous carbon films as resist masks with high reactive ion etching resistance for nanometer lithography</atitle><jtitle>Applied physics letters</jtitle><date>1986-03-31</date><risdate>1986</risdate><volume>48</volume><issue>13</issue><spage>835</spage><epage>837</epage><pages>835-837</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We propose the application of carbon films as resist masks for practical nanometer lithography involving reactive ion etching (RIE). Amorphous carbon films prepared by room-temperature plasma chemical vapor deposition show a very high resistance against RIE, the etching rates being less than 1/2 of that of a novolak-based conventional photoresist. The carbon films can be finely patterned by O2 RIE in a bilayer resist process using a high-resolution silicone-based negative resist. Nanometer patterns as small as 40 nm are fabricated on a thick solid substrate, and can be transferred into the substrate layer directly by RIE.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.96683</doi><tpages>3</tpages></addata></record>
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subjects Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Other techniques and industries
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title Amorphous carbon films as resist masks with high reactive ion etching resistance for nanometer lithography
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T15%3A19%3A52IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Amorphous%20carbon%20films%20as%20resist%20masks%20with%20high%20reactive%20ion%20etching%20resistance%20for%20nanometer%20lithography&rft.jtitle=Applied%20physics%20letters&rft.au=KAKUCHI,%20M&rft.date=1986-03-31&rft.volume=48&rft.issue=13&rft.spage=835&rft.epage=837&rft.pages=835-837&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.96683&rft_dat=%3Cpascalfrancis_cross%3E8105541%3C/pascalfrancis_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c281t-55edd4f3c9cf8f0a9ecae59c45c9a938e79cfef8ad7dc283c5e6410e5202afec3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true