Growth of GaAs by switched laser metalorganic vapor phase epitaxy

Crystal growth of GaAs by switched laser metalorganic vapor phase epitaxy (SL MOVPE) is reported. This growth technique is achieved by combining laser MOVPE and atomic layer epitaxy. The growth process in SL MOVPE can be explained by a model which assumes that trimethylgallium adsorbed on the crysta...

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Bibliographic Details
Published in:Applied physics letters 1986-06, Vol.48 (26), p.1787-1789
Main Authors: DOI, A, AOYAGI, Y, NAMBA, S
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:Crystal growth of GaAs by switched laser metalorganic vapor phase epitaxy (SL MOVPE) is reported. This growth technique is achieved by combining laser MOVPE and atomic layer epitaxy. The growth process in SL MOVPE can be explained by a model which assumes that trimethylgallium adsorbed on the crystal surface is decomposed in a photocatalytic reaction and that the decomposition rate depends on the surface species present on the substrate.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.96787