SiO2 buried layer formation by subcritical dose oxygen ion implantation

The structure of the silicon dioxide buried layer formed by oxygen ion implantation at a subcritical dose i.e., 1.3×1018 ion cm−2 at 200 keV is studied. The beneficial effect of a high annealing temperature at 1300 °C for 6 h is discussed. A method for estimation of the total amount of SiO2 precipit...

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Bibliographic Details
Published in:Applied physics letters 1986-05, Vol.48 (21), p.1470-1472
Main Authors: STOEMENOS, J, MARGAIL, J, JAUSSAUD, C, DUPUY, M, BRUEL, M
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
Doping and impurity implantation in iii-v and ii-vi semiconductors
Exact sciences and technology
Physics
Structure of solids and liquids
crystallography
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Summary:The structure of the silicon dioxide buried layer formed by oxygen ion implantation at a subcritical dose i.e., 1.3×1018 ion cm−2 at 200 keV is studied. The beneficial effect of a high annealing temperature at 1300 °C for 6 h is discussed. A method for estimation of the total amount of SiO2 precipitated in the silicon overlayer is also presented, and these results are correlated with published electrical measurements.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.96892