High resolution scanning photoluminescence characterization of semi-insulating GaAs using a laser scanning microscope

Spatially resolved photoluminescence properties of semi-insulating, liquid encapsulated Czochralski-grown GaAs substrates are analyzed with a laser scanning microscope. The improved resolution of the laser scanning microscope results in the observation of single dislocations within the subgrain boun...

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Bibliographic Details
Published in:Applied physics letters 1986-12, Vol.49 (25), p.1732-1734
Main Authors: MAREK, J, ELLIOT, A. G, WILKE, V, GEISS, R
Format: Article
Language:English
Subjects:
Applied sciences
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Other techniques and industries
Photoluminescence
Physics
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Summary:Spatially resolved photoluminescence properties of semi-insulating, liquid encapsulated Czochralski-grown GaAs substrates are analyzed with a laser scanning microscope. The improved resolution of the laser scanning microscope results in the observation of single dislocations within the subgrain boundaries of the polyganized dislocation cell network for the first time by photoluminescence. Both the cell structure and the Cottrell cloud are clearly resolved.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.97230