Epitaxial growth of NiSi2 on ion-implanted silicon at 250―280 °C

Striking effects of dopant atoms on the formation of Ni silicides were observed. Epitaxial NiSi2 was found to grow on both BF+2- and B+-implanted (001) and (111)Si at 250–280 °C. The formation of Ni2Si was suppressed. It is conjectured that the presence of dopant atoms may lower the activation energ...

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Bibliographic Details
Published in:Applied physics letters 1986-12, Vol.49 (26), p.1770-1772
Main Authors: LU, S. W, NIEH, C. W, CHEN, L. J
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:Striking effects of dopant atoms on the formation of Ni silicides were observed. Epitaxial NiSi2 was found to grow on both BF+2- and B+-implanted (001) and (111)Si at 250–280 °C. The formation of Ni2Si was suppressed. It is conjectured that the presence of dopant atoms may lower the activation energy substantially to promote the formation of epitaxial NiSi2 at low temperatures. The effects may be exploited to grow other epitaxial silicides on silicon at low temperatures.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.97239