X-ray photoemission core level determination of the GaSb/AlSb heterojunction valence-band discontinuity

The valence-band discontinuity ΔEv has been determined for the (100) GaSb/AlSb strained-layer heterojunction with a room-temperature lattice mismatch of 0.65%, using x-ray photoemission core level spectroscopy. For 30 Å epitaxial layers of AlSb grown on GaSb, the measured valence-band offset was ΔEv...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 1986-10, Vol.49 (16), p.1037-1039
Main Authors: GUALTIERI, G. J, SCHWARTZ, G. P, NUZZO, R. G, SUNDER, W. A
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Interfaces
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The valence-band discontinuity ΔEv has been determined for the (100) GaSb/AlSb strained-layer heterojunction with a room-temperature lattice mismatch of 0.65%, using x-ray photoemission core level spectroscopy. For 30 Å epitaxial layers of AlSb grown on GaSb, the measured valence-band offset was ΔEv=0.40±0.15 eV. The reverse growth sequence consisting of a thin GaSb layer grown on an AlSb buffer exhibited the same valence-band offset, indicating that for the (100) oriented heterojunction ΔEv is not strongly affected by the growth sequence.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.97464