Internal thermal stress distribution in InGaAsP/InP lasers

The two-dimensional distribution of the internal thermal stress in the active layer of a buried heterostructure InGaAsP/InP laser is calculated with the finite-element method for active regions of both rectangular and crescent shapes. The shape and the finite width of the stripe cause nonuniform dis...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 1986-10, Vol.49 (14), p.895-897
Main Authors: LIU, J. M, CHEN, Y. C, WAYNE, S. F
Format: Article
Language:English
Subjects:
Applied sciences
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Other techniques and industries
Physics
Semiconductor lasers
laser diodes
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The two-dimensional distribution of the internal thermal stress in the active layer of a buried heterostructure InGaAsP/InP laser is calculated with the finite-element method for active regions of both rectangular and crescent shapes. The shape and the finite width of the stripe cause nonuniform distribution of the thermal stress in the active layer. The results show different distributions for these two shapes, particularly near the edges of the active regions. Large stress and stress gradient are found around the tips of the crescent, which may imply problems such as defects and mode instability in real devices.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.97528