Improved polycrystalline silicon sheet resistance by rapid thermal annealing prior and subsequent to ion implantation

Polycrystalline Si films on oxidized Si wafers have been subjected to a rapid thermal processing anneal prior to As ion implantation. After ion implantation the films are given another rapid thermal processing anneal to activate the As. The preimplant anneal causes the as-deposited grain size to inc...

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Bibliographic Details
Published in:Applied physics letters 1986-09, Vol.49 (11), p.660-662
Main Authors: WILSON, S. R, GREGORY, R. B, PAULSON, W. M, KRAUSE, S. J, LEAVITT, J. A, MCINTYRE, L. C. JR, SEERVELD, J. L, STOSS, P
Format: Article
Language:English
Subjects:
Charge carriers: generation, recombination, lifetime, and trapping
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity phenomena in semiconductors and insulators
Electronic transport in condensed matter
Exact sciences and technology
Physics
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Summary:Polycrystalline Si films on oxidized Si wafers have been subjected to a rapid thermal processing anneal prior to As ion implantation. After ion implantation the films are given another rapid thermal processing anneal to activate the As. The preimplant anneal causes the as-deposited grain size to increase by ∼ a factor of 10. These films have a 20–30% lower sheet resistance than films that were post-implant annealed only. The increase in grain size by the preimplant anneal reduces the grain boundary area and therefore, minimizes the amount of dopant in the grain boundary relative to the grain.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.97560