Erbium doping of molecular beam epitaxial GaAs

The doping of molecular beam epitaxial GaAs with erbium up to a concentration of 2×1019 cm−3 has been successfully demonstrated. Up to a concentration of about 5×1018 cm−3 the surface morphology remained good but for higher doping levels the surface became structured. Hall and profile measurements i...

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Bibliographic Details
Published in:Applied physics letters 1987-01, Vol.50 (1), p.49-51
Main Authors: SMITH, R. S, MÜLLER, H. D, ENNEN, H, WENNEKERS, P, MAIER, M
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
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Summary:The doping of molecular beam epitaxial GaAs with erbium up to a concentration of 2×1019 cm−3 has been successfully demonstrated. Up to a concentration of about 5×1018 cm−3 the surface morphology remained good but for higher doping levels the surface became structured. Hall and profile measurements indicate that erbium doping gives rise to a trapping level capable of compensating silicon-doped layers. For the first time photoluminescence from a rare earth element incorporated in a III-V semiconductor has been observed at room temperature.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.98127