Erbium doping of molecular beam epitaxial GaAs

The doping of molecular beam epitaxial GaAs with erbium up to a concentration of 2×1019 cm−3 has been successfully demonstrated. Up to a concentration of about 5×1018 cm−3 the surface morphology remained good but for higher doping levels the surface became structured. Hall and profile measurements i...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 1987-01, Vol.50 (1), p.49-51
Main Authors: SMITH, R. S, MÜLLER, H. D, ENNEN, H, WENNEKERS, P, MAIER, M
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c353t-9142e4ba6fce8b1e8249ab9a068e30ce54ee9f1b68489d1a03fc5d89bc4f051f3
cites cdi_FETCH-LOGICAL-c353t-9142e4ba6fce8b1e8249ab9a068e30ce54ee9f1b68489d1a03fc5d89bc4f051f3
container_end_page 51
container_issue 1
container_start_page 49
container_title Applied physics letters
container_volume 50
creator SMITH, R. S
MÜLLER, H. D
ENNEN, H
WENNEKERS, P
MAIER, M
description The doping of molecular beam epitaxial GaAs with erbium up to a concentration of 2×1019 cm−3 has been successfully demonstrated. Up to a concentration of about 5×1018 cm−3 the surface morphology remained good but for higher doping levels the surface became structured. Hall and profile measurements indicate that erbium doping gives rise to a trapping level capable of compensating silicon-doped layers. For the first time photoluminescence from a rare earth element incorporated in a III-V semiconductor has been observed at room temperature.
doi_str_mv 10.1063/1.98127
format article
fullrecord <record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_98127</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>7468987</sourcerecordid><originalsourceid>FETCH-LOGICAL-c353t-9142e4ba6fce8b1e8249ab9a068e30ce54ee9f1b68489d1a03fc5d89bc4f051f3</originalsourceid><addsrcrecordid>eNo9j81KxDAURoMoWEfxFboQXLXmNj9NlsMwjsKAG12Xm_RGIu20JDOgb-_oiKuPDw4HDmO3wGvgWjxAbQ007RkrgLdtJQDMOSs456LSVsElu8r543hVI0TB6nVy8TCW_TTH3Xs5hXKcBvKHAVPpCMeS5rjHz4hDucFlvmYXAYdMN3-7YG-P69fVU7V92TyvltvKCyX2lQXZkHSogyfjgEwjLTqLXBsS3JOSRDaA00Ya2wNyEbzqjXVeBq4giAW7P3l9mnJOFLo5xRHTVwe8-8nsoPvNPJJ3J3LG7HEICXc-5n-8ldpY04pvH-BQGA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Erbium doping of molecular beam epitaxial GaAs</title><source>AIP Digital Archive</source><creator>SMITH, R. S ; MÜLLER, H. D ; ENNEN, H ; WENNEKERS, P ; MAIER, M</creator><creatorcontrib>SMITH, R. S ; MÜLLER, H. D ; ENNEN, H ; WENNEKERS, P ; MAIER, M</creatorcontrib><description>The doping of molecular beam epitaxial GaAs with erbium up to a concentration of 2×1019 cm−3 has been successfully demonstrated. Up to a concentration of about 5×1018 cm−3 the surface morphology remained good but for higher doping levels the surface became structured. Hall and profile measurements indicate that erbium doping gives rise to a trapping level capable of compensating silicon-doped layers. For the first time photoluminescence from a rare earth element incorporated in a III-V semiconductor has been observed at room temperature.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.98127</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Exact sciences and technology ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Photoluminescence ; Physics</subject><ispartof>Applied physics letters, 1987-01, Vol.50 (1), p.49-51</ispartof><rights>1988 INIST-CNRS</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c353t-9142e4ba6fce8b1e8249ab9a068e30ce54ee9f1b68489d1a03fc5d89bc4f051f3</citedby><cites>FETCH-LOGICAL-c353t-9142e4ba6fce8b1e8249ab9a068e30ce54ee9f1b68489d1a03fc5d89bc4f051f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=7468987$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>SMITH, R. S</creatorcontrib><creatorcontrib>MÜLLER, H. D</creatorcontrib><creatorcontrib>ENNEN, H</creatorcontrib><creatorcontrib>WENNEKERS, P</creatorcontrib><creatorcontrib>MAIER, M</creatorcontrib><title>Erbium doping of molecular beam epitaxial GaAs</title><title>Applied physics letters</title><description>The doping of molecular beam epitaxial GaAs with erbium up to a concentration of 2×1019 cm−3 has been successfully demonstrated. Up to a concentration of about 5×1018 cm−3 the surface morphology remained good but for higher doping levels the surface became structured. Hall and profile measurements indicate that erbium doping gives rise to a trapping level capable of compensating silicon-doped layers. For the first time photoluminescence from a rare earth element incorporated in a III-V semiconductor has been observed at room temperature.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Exact sciences and technology</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Photoluminescence</subject><subject>Physics</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1987</creationdate><recordtype>article</recordtype><recordid>eNo9j81KxDAURoMoWEfxFboQXLXmNj9NlsMwjsKAG12Xm_RGIu20JDOgb-_oiKuPDw4HDmO3wGvgWjxAbQ007RkrgLdtJQDMOSs456LSVsElu8r543hVI0TB6nVy8TCW_TTH3Xs5hXKcBvKHAVPpCMeS5rjHz4hDucFlvmYXAYdMN3-7YG-P69fVU7V92TyvltvKCyX2lQXZkHSogyfjgEwjLTqLXBsS3JOSRDaA00Ya2wNyEbzqjXVeBq4giAW7P3l9mnJOFLo5xRHTVwe8-8nsoPvNPJJ3J3LG7HEICXc-5n-8ldpY04pvH-BQGA</recordid><startdate>19870105</startdate><enddate>19870105</enddate><creator>SMITH, R. S</creator><creator>MÜLLER, H. D</creator><creator>ENNEN, H</creator><creator>WENNEKERS, P</creator><creator>MAIER, M</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19870105</creationdate><title>Erbium doping of molecular beam epitaxial GaAs</title><author>SMITH, R. S ; MÜLLER, H. D ; ENNEN, H ; WENNEKERS, P ; MAIER, M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c353t-9142e4ba6fce8b1e8249ab9a068e30ce54ee9f1b68489d1a03fc5d89bc4f051f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1987</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Exact sciences and technology</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Photoluminescence</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>SMITH, R. S</creatorcontrib><creatorcontrib>MÜLLER, H. D</creatorcontrib><creatorcontrib>ENNEN, H</creatorcontrib><creatorcontrib>WENNEKERS, P</creatorcontrib><creatorcontrib>MAIER, M</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>SMITH, R. S</au><au>MÜLLER, H. D</au><au>ENNEN, H</au><au>WENNEKERS, P</au><au>MAIER, M</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Erbium doping of molecular beam epitaxial GaAs</atitle><jtitle>Applied physics letters</jtitle><date>1987-01-05</date><risdate>1987</risdate><volume>50</volume><issue>1</issue><spage>49</spage><epage>51</epage><pages>49-51</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>The doping of molecular beam epitaxial GaAs with erbium up to a concentration of 2×1019 cm−3 has been successfully demonstrated. Up to a concentration of about 5×1018 cm−3 the surface morphology remained good but for higher doping levels the surface became structured. Hall and profile measurements indicate that erbium doping gives rise to a trapping level capable of compensating silicon-doped layers. For the first time photoluminescence from a rare earth element incorporated in a III-V semiconductor has been observed at room temperature.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.98127</doi><tpages>3</tpages><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 1987-01, Vol.50 (1), p.49-51
issn 0003-6951
1077-3118
language eng
recordid cdi_crossref_primary_10_1063_1_98127
source AIP Digital Archive
subjects Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
title Erbium doping of molecular beam epitaxial GaAs
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T15%3A22%3A35IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Erbium%20doping%20of%20molecular%20beam%20epitaxial%20GaAs&rft.jtitle=Applied%20physics%20letters&rft.au=SMITH,%20R.%20S&rft.date=1987-01-05&rft.volume=50&rft.issue=1&rft.spage=49&rft.epage=51&rft.pages=49-51&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.98127&rft_dat=%3Cpascalfrancis_cross%3E7468987%3C/pascalfrancis_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c353t-9142e4ba6fce8b1e8249ab9a068e30ce54ee9f1b68489d1a03fc5d89bc4f051f3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true