Plasma enhanced chemical vapor deposition of fluorinated silicon nitride using SiH4-NH3-NF3 mixtures

Fluorinated silicon nitride films are deposited by the plasma enhanced reaction of SiH4-NH3-NF3 gas mixtures. The deposition rate with NF3 increases to a maximum of approximately six times that of SiNxHy deposited using only SiH4 and NH3. Optical and electrical properties of the SiNxHy films are als...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 1987-03, Vol.50 (10), p.560-562
Main Authors: LIVENGOOD, R. E, HESS, D. W
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c318t-ed8050d70f51653d5dcf528d280f85132f70f600f65a74d2e9462a69e40bd6953
cites cdi_FETCH-LOGICAL-c318t-ed8050d70f51653d5dcf528d280f85132f70f600f65a74d2e9462a69e40bd6953
container_end_page 562
container_issue 10
container_start_page 560
container_title Applied physics letters
container_volume 50
creator LIVENGOOD, R. E
HESS, D. W
description Fluorinated silicon nitride films are deposited by the plasma enhanced reaction of SiH4-NH3-NF3 gas mixtures. The deposition rate with NF3 increases to a maximum of approximately six times that of SiNxHy deposited using only SiH4 and NH3. Optical and electrical properties of the SiNxHy films are also affected. The addition of NF3 to the deposition atmosphere significantly reduces the concentration of H bonded to Si. The films display dielectric properties similar to SiNxHy films deposited using SiH4 and NH3. All films containing F hydrolyze on exposure to air. When less than 10 at. % F is present in the as-deposited films, film stability is achieved after initial hydrolysis. Essentially total hydrolysis to SiO2 occurs when the F content exceeds 10 at. %.
doi_str_mv 10.1063/1.98134
format article
fullrecord <record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_98134</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>7407038</sourcerecordid><originalsourceid>FETCH-LOGICAL-c318t-ed8050d70f51653d5dcf528d280f85132f70f600f65a74d2e9462a69e40bd6953</originalsourceid><addsrcrecordid>eNo9kE1LAzEQhoMoWKv4F3IQPKVOdja72aMU2wqlCup5ifmwkf0i2RX990YrHoZhZh4GnpeQSw4LDgXe8EUlOeZHZMahLBlyLo_JDACQFZXgp-Qsxvc0igxxRsxjo2KrqO32qtPWUL23rdeqoR9q6AM1duijH33f0d5R10x98J0aExh943Vad34M3lg6Rd-90Se_ydlug2y3Qtr6z3EKNp6TE6eaaC_--py8rO6elxu2fVjfL2-3TCOXI7NGggBTghO8EGiE0U5k0mQSnBQcM5dOBaQSqsxNZqu8yFRR2RxeTXLDObk-_NWhjzFYVw_Btyp81Rzqn3BqXv-Gk8irAzmomGRdSPI-_uNlDiWgxG_hLWKh</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Plasma enhanced chemical vapor deposition of fluorinated silicon nitride using SiH4-NH3-NF3 mixtures</title><source>AIP Digital Archive</source><creator>LIVENGOOD, R. E ; HESS, D. W</creator><creatorcontrib>LIVENGOOD, R. E ; HESS, D. W</creatorcontrib><description>Fluorinated silicon nitride films are deposited by the plasma enhanced reaction of SiH4-NH3-NF3 gas mixtures. The deposition rate with NF3 increases to a maximum of approximately six times that of SiNxHy deposited using only SiH4 and NH3. Optical and electrical properties of the SiNxHy films are also affected. The addition of NF3 to the deposition atmosphere significantly reduces the concentration of H bonded to Si. The films display dielectric properties similar to SiNxHy films deposited using SiH4 and NH3. All films containing F hydrolyze on exposure to air. When less than 10 at. % F is present in the as-deposited films, film stability is achieved after initial hydrolysis. Essentially total hydrolysis to SiO2 occurs when the F content exceeds 10 at. %.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.98134</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>Condensed matter: structure, mechanical and thermal properties ; Exact sciences and technology ; Physics ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology</subject><ispartof>Applied physics letters, 1987-03, Vol.50 (10), p.560-562</ispartof><rights>1988 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c318t-ed8050d70f51653d5dcf528d280f85132f70f600f65a74d2e9462a69e40bd6953</citedby><cites>FETCH-LOGICAL-c318t-ed8050d70f51653d5dcf528d280f85132f70f600f65a74d2e9462a69e40bd6953</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=7407038$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>LIVENGOOD, R. E</creatorcontrib><creatorcontrib>HESS, D. W</creatorcontrib><title>Plasma enhanced chemical vapor deposition of fluorinated silicon nitride using SiH4-NH3-NF3 mixtures</title><title>Applied physics letters</title><description>Fluorinated silicon nitride films are deposited by the plasma enhanced reaction of SiH4-NH3-NF3 gas mixtures. The deposition rate with NF3 increases to a maximum of approximately six times that of SiNxHy deposited using only SiH4 and NH3. Optical and electrical properties of the SiNxHy films are also affected. The addition of NF3 to the deposition atmosphere significantly reduces the concentration of H bonded to Si. The films display dielectric properties similar to SiNxHy films deposited using SiH4 and NH3. All films containing F hydrolyze on exposure to air. When less than 10 at. % F is present in the as-deposited films, film stability is achieved after initial hydrolysis. Essentially total hydrolysis to SiO2 occurs when the F content exceeds 10 at. %.</description><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1987</creationdate><recordtype>article</recordtype><recordid>eNo9kE1LAzEQhoMoWKv4F3IQPKVOdja72aMU2wqlCup5ifmwkf0i2RX990YrHoZhZh4GnpeQSw4LDgXe8EUlOeZHZMahLBlyLo_JDACQFZXgp-Qsxvc0igxxRsxjo2KrqO32qtPWUL23rdeqoR9q6AM1duijH33f0d5R10x98J0aExh943Vad34M3lg6Rd-90Se_ydlug2y3Qtr6z3EKNp6TE6eaaC_--py8rO6elxu2fVjfL2-3TCOXI7NGggBTghO8EGiE0U5k0mQSnBQcM5dOBaQSqsxNZqu8yFRR2RxeTXLDObk-_NWhjzFYVw_Btyp81Rzqn3BqXv-Gk8irAzmomGRdSPI-_uNlDiWgxG_hLWKh</recordid><startdate>19870309</startdate><enddate>19870309</enddate><creator>LIVENGOOD, R. E</creator><creator>HESS, D. W</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19870309</creationdate><title>Plasma enhanced chemical vapor deposition of fluorinated silicon nitride using SiH4-NH3-NF3 mixtures</title><author>LIVENGOOD, R. E ; HESS, D. W</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c318t-ed8050d70f51653d5dcf528d280f85132f70f600f65a74d2e9462a69e40bd6953</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1987</creationdate><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>LIVENGOOD, R. E</creatorcontrib><creatorcontrib>HESS, D. W</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>LIVENGOOD, R. E</au><au>HESS, D. W</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Plasma enhanced chemical vapor deposition of fluorinated silicon nitride using SiH4-NH3-NF3 mixtures</atitle><jtitle>Applied physics letters</jtitle><date>1987-03-09</date><risdate>1987</risdate><volume>50</volume><issue>10</issue><spage>560</spage><epage>562</epage><pages>560-562</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Fluorinated silicon nitride films are deposited by the plasma enhanced reaction of SiH4-NH3-NF3 gas mixtures. The deposition rate with NF3 increases to a maximum of approximately six times that of SiNxHy deposited using only SiH4 and NH3. Optical and electrical properties of the SiNxHy films are also affected. The addition of NF3 to the deposition atmosphere significantly reduces the concentration of H bonded to Si. The films display dielectric properties similar to SiNxHy films deposited using SiH4 and NH3. All films containing F hydrolyze on exposure to air. When less than 10 at. % F is present in the as-deposited films, film stability is achieved after initial hydrolysis. Essentially total hydrolysis to SiO2 occurs when the F content exceeds 10 at. %.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.98134</doi><tpages>3</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 1987-03, Vol.50 (10), p.560-562
issn 0003-6951
1077-3118
language eng
recordid cdi_crossref_primary_10_1063_1_98134
source AIP Digital Archive
subjects Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
title Plasma enhanced chemical vapor deposition of fluorinated silicon nitride using SiH4-NH3-NF3 mixtures
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T01%3A36%3A07IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Plasma%20enhanced%20chemical%20vapor%20deposition%20of%20fluorinated%20silicon%20nitride%20using%20SiH4-NH3-NF3%20mixtures&rft.jtitle=Applied%20physics%20letters&rft.au=LIVENGOOD,%20R.%20E&rft.date=1987-03-09&rft.volume=50&rft.issue=10&rft.spage=560&rft.epage=562&rft.pages=560-562&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.98134&rft_dat=%3Cpascalfrancis_cross%3E7407038%3C/pascalfrancis_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c318t-ed8050d70f51653d5dcf528d280f85132f70f600f65a74d2e9462a69e40bd6953%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true