Plasma-enhanced deposition of high-quality epitaxial silicon at low temperatures

The use of a plasma during the deposition of epitaxial silicon from 750 to 800 °C is explored. Emphasis is placed on enhancement of the deposition process as opposed to the predeposition surface clean. Plasma enhancement of the deposition process is observed without a change in the apparent activati...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 1987-12, Vol.51 (24), p.2016-2018
Main Authors: COMFORT, J. H, REIF, R
Format: Article
Language:English
Subjects:
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The use of a plasma during the deposition of epitaxial silicon from 750 to 800 °C is explored. Emphasis is placed on enhancement of the deposition process as opposed to the predeposition surface clean. Plasma enhancement of the deposition process is observed without a change in the apparent activation energy, and the mild ion bombardment (plasma) exposure during deposition introduced no additional defects observable by cross-sectional transmission electron microscopy. Plasma enhancement is also shown to facilitate deposition of high-quality epitaxial silicon films with low levels of unintentional impurity incorporation.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.98278