Plasma-enhanced deposition of high-quality epitaxial silicon at low temperatures

The use of a plasma during the deposition of epitaxial silicon from 750 to 800 °C is explored. Emphasis is placed on enhancement of the deposition process as opposed to the predeposition surface clean. Plasma enhancement of the deposition process is observed without a change in the apparent activati...

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Published in:Applied physics letters 1987-12, Vol.51 (24), p.2016-2018
Main Authors: COMFORT, J. H, REIF, R
Format: Article
Language:English
Subjects:
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
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cited_by cdi_FETCH-LOGICAL-c318t-496acdf11097cd155f2ed569a8f19aee919e7dc23dc437168b1a37a90e527623
cites cdi_FETCH-LOGICAL-c318t-496acdf11097cd155f2ed569a8f19aee919e7dc23dc437168b1a37a90e527623
container_end_page 2018
container_issue 24
container_start_page 2016
container_title Applied physics letters
container_volume 51
creator COMFORT, J. H
REIF, R
description The use of a plasma during the deposition of epitaxial silicon from 750 to 800 °C is explored. Emphasis is placed on enhancement of the deposition process as opposed to the predeposition surface clean. Plasma enhancement of the deposition process is observed without a change in the apparent activation energy, and the mild ion bombardment (plasma) exposure during deposition introduced no additional defects observable by cross-sectional transmission electron microscopy. Plasma enhancement is also shown to facilitate deposition of high-quality epitaxial silicon films with low levels of unintentional impurity incorporation.
doi_str_mv 10.1063/1.98278
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fullrecord <record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_98278</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>7747135</sourcerecordid><originalsourceid>FETCH-LOGICAL-c318t-496acdf11097cd155f2ed569a8f19aee919e7dc23dc437168b1a37a90e527623</originalsourceid><addsrcrecordid>eNo9kEtLAzEUhYMoWKv4F7IQXKXmTprJZCnFFxTsovvhmtzYyLQzJinaf-_4wNXhwMeB8zF2CXIGslY3MLNNZZojNgFpjFAAzTGbSCmVqK2GU3aW89tYdaXUhK1WHeYtCtptcOfIc09Dn2OJ_Y73gW_i60a877GL5cBpiAU_I3Y8xy66kcDCu_6DF9oOlLDsE-VzdhKwy3Txl1O2vr9bLx7F8vnhaXG7FE5BU8Tc1uh8AJDWOA9ah4q8ri02ASwSWbBkvKuUd3NloG5eAJVBK0lXpq7UlF3_zrrU55wotEOKW0yHFmT77aGF9sfDSF79kgNmh11I48-Y_3Fj5gaUVl8dhVz8</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Plasma-enhanced deposition of high-quality epitaxial silicon at low temperatures</title><source>AIP Digital Archive</source><creator>COMFORT, J. H ; REIF, R</creator><creatorcontrib>COMFORT, J. H ; REIF, R</creatorcontrib><description>The use of a plasma during the deposition of epitaxial silicon from 750 to 800 °C is explored. Emphasis is placed on enhancement of the deposition process as opposed to the predeposition surface clean. Plasma enhancement of the deposition process is observed without a change in the apparent activation energy, and the mild ion bombardment (plasma) exposure during deposition introduced no additional defects observable by cross-sectional transmission electron microscopy. Plasma enhancement is also shown to facilitate deposition of high-quality epitaxial silicon films with low levels of unintentional impurity incorporation.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.98278</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Physics</subject><ispartof>Applied physics letters, 1987-12, Vol.51 (24), p.2016-2018</ispartof><rights>1988 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c318t-496acdf11097cd155f2ed569a8f19aee919e7dc23dc437168b1a37a90e527623</citedby><cites>FETCH-LOGICAL-c318t-496acdf11097cd155f2ed569a8f19aee919e7dc23dc437168b1a37a90e527623</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,778,782,27907,27908</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=7747135$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>COMFORT, J. H</creatorcontrib><creatorcontrib>REIF, R</creatorcontrib><title>Plasma-enhanced deposition of high-quality epitaxial silicon at low temperatures</title><title>Applied physics letters</title><description>The use of a plasma during the deposition of epitaxial silicon from 750 to 800 °C is explored. Emphasis is placed on enhancement of the deposition process as opposed to the predeposition surface clean. Plasma enhancement of the deposition process is observed without a change in the apparent activation energy, and the mild ion bombardment (plasma) exposure during deposition introduced no additional defects observable by cross-sectional transmission electron microscopy. Plasma enhancement is also shown to facilitate deposition of high-quality epitaxial silicon films with low levels of unintentional impurity incorporation.</description><subject>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Physics</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1987</creationdate><recordtype>article</recordtype><recordid>eNo9kEtLAzEUhYMoWKv4F7IQXKXmTprJZCnFFxTsovvhmtzYyLQzJinaf-_4wNXhwMeB8zF2CXIGslY3MLNNZZojNgFpjFAAzTGbSCmVqK2GU3aW89tYdaXUhK1WHeYtCtptcOfIc09Dn2OJ_Y73gW_i60a877GL5cBpiAU_I3Y8xy66kcDCu_6DF9oOlLDsE-VzdhKwy3Txl1O2vr9bLx7F8vnhaXG7FE5BU8Tc1uh8AJDWOA9ah4q8ri02ASwSWbBkvKuUd3NloG5eAJVBK0lXpq7UlF3_zrrU55wotEOKW0yHFmT77aGF9sfDSF79kgNmh11I48-Y_3Fj5gaUVl8dhVz8</recordid><startdate>19871214</startdate><enddate>19871214</enddate><creator>COMFORT, J. H</creator><creator>REIF, R</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19871214</creationdate><title>Plasma-enhanced deposition of high-quality epitaxial silicon at low temperatures</title><author>COMFORT, J. H ; REIF, R</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c318t-496acdf11097cd155f2ed569a8f19aee919e7dc23dc437168b1a37a90e527623</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1987</creationdate><topic>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>COMFORT, J. H</creatorcontrib><creatorcontrib>REIF, R</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>COMFORT, J. H</au><au>REIF, R</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Plasma-enhanced deposition of high-quality epitaxial silicon at low temperatures</atitle><jtitle>Applied physics letters</jtitle><date>1987-12-14</date><risdate>1987</risdate><volume>51</volume><issue>24</issue><spage>2016</spage><epage>2018</epage><pages>2016-2018</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>The use of a plasma during the deposition of epitaxial silicon from 750 to 800 °C is explored. Emphasis is placed on enhancement of the deposition process as opposed to the predeposition surface clean. Plasma enhancement of the deposition process is observed without a change in the apparent activation energy, and the mild ion bombardment (plasma) exposure during deposition introduced no additional defects observable by cross-sectional transmission electron microscopy. Plasma enhancement is also shown to facilitate deposition of high-quality epitaxial silicon films with low levels of unintentional impurity incorporation.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.98278</doi><tpages>3</tpages></addata></record>
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ispartof Applied physics letters, 1987-12, Vol.51 (24), p.2016-2018
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1077-3118
language eng
recordid cdi_crossref_primary_10_1063_1_98278
source AIP Digital Archive
subjects Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
title Plasma-enhanced deposition of high-quality epitaxial silicon at low temperatures
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-16T21%3A21%3A08IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Plasma-enhanced%20deposition%20of%20high-quality%20epitaxial%20silicon%20at%20low%20temperatures&rft.jtitle=Applied%20physics%20letters&rft.au=COMFORT,%20J.%20H&rft.date=1987-12-14&rft.volume=51&rft.issue=24&rft.spage=2016&rft.epage=2018&rft.pages=2016-2018&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.98278&rft_dat=%3Cpascalfrancis_cross%3E7747135%3C/pascalfrancis_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c318t-496acdf11097cd155f2ed569a8f19aee919e7dc23dc437168b1a37a90e527623%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true