Photoemission oscillations during epitaxial growth

We report the use of in situ, near-threshold photoemission to study the dynamics of GaAs surfaces during epitaxial crystal growth and, in particular, the observation of oscillations in the photoemitted current. These oscillations are found to depend upon the growth rate in the same manner as do refl...

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Bibliographic Details
Published in:Applied physics letters 1987-11, Vol.51 (22), p.1833-1835
Main Authors: ECKSTEIN, J. N, WEBB, C, WENG, S.-L, BERTNESS, K. A
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:We report the use of in situ, near-threshold photoemission to study the dynamics of GaAs surfaces during epitaxial crystal growth and, in particular, the observation of oscillations in the photoemitted current. These oscillations are found to depend upon the growth rate in the same manner as do reflecting high-energy electron diffraction intensity oscillations, occurring at the monolayer accumulation rate. We believe that they depend upon a cyclical variation in the step edge density on the growing surface and discuss the mechanism through which the oscillatory current may result from surface states or surface dipoles.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.98485